Transport and switching behaviors in magnetic tunnel junctions consisting of CoFeB/FeNiSiB hybrid free layers
نویسندگان
چکیده
of CoFeB/FeNiSiB hybrid free layers D. H. Kim, D. K. Kim, J. U. Cho, S. Y. Park, S. Isogami, M. Tsunoda, M. Takahashi, E. E. Fullerton, and Y. K. Kim Department of Materials Science and Engineering, Korea University, Seoul 136-713, Korea Division of Materials Science, Korea Basic Science Institute, Daejeon 305-333, Korea Department of General Education, Fukushima National College of Technology, Iwaki 970-8034, Japan Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan Center for Magnetic Recording Research, University of California, San Diego, La Jolla, California 92093, USA
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